Open AccessСпособ формирования пленок фазы beta-FeSi-=SUB=-2-=/SUB=- методом импульсного лазерного осаждения в вакууме
Author(s) -
Ю.М. Кузнецов,
М. В. Дорохин,
А.В. Нежданов,
Д.А. Здоровейщев,
В. П. Лесников,
А.И. Машин
Publication year - 2021
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.09.51293.23
Subject(s) - sapphire , materials science , silicon , raman spectroscopy , phase (matter) , analytical chemistry (journal) , layer (electronics) , sputtering , deposition (geology) , pulsed laser deposition , magnetic field , thin film , laser , optoelectronics , nanotechnology , chemistry , optics , physics , quantum mechanics , chromatography , paleontology , biology , organic chemistry , sediment
The paper considers a new method for the formationof the β-FeSi2 phase on silicon and sapphire substrates by pulsedlaser deposition in vacuum. A series of structures with varyingiron concentration in the sputtered target was prepared. Thephase composition of the films is analyzed from the identificationof peaks in the Raman spectra. The study of the magneticproperties of the samples was carried out by recording themagnetic field dependence of the Hall resistance. The formation ofadditional magnetic phases Fe3Si and FeSi is shown under growthconditions that provide an increased incorporation of Fe atomsinto the formed layer. The analysis of the phase composition offilms formed on silicon and sapphire substrates with the sametechnological growth parameters is carried out.
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