Open AccessРелаксация электронного спина и резонансное охлаждение ядерных спинов в структурах GaAs : Mn
Author(s) -
А.Е. Евдокимов,
М.С. Кузнецова,
А.В. Михайлов,
К.В. Кавокин,
Р.И. Джиоев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.09.51287.14
Subject(s) - spins , photoluminescence , condensed matter physics , electron , relaxation (psychology) , polarization (electrochemistry) , materials science , spin polarization , electron cooling , optical pumping , spin (aerodynamics) , transverse plane , doping , circular polarization , atomic physics , magnetic field , optoelectronics , physics , chemistry , optics , psychology , social psychology , laser , structural engineering , engineering , quantum mechanics , thermodynamics
The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically oriented electron spins is demonstrated.