Open AccessАтомная структура и оптические свойства слоев CaSi-=SUB=-2-=/SUB=-, выращенных на CaF-=SUB=-2-=/SUB=-/Si-подложках
Author(s) -
В.А. Зиновьев,
А. В. Кацюба,
В. А. Володин,
А.Ф. Зиновьева,
S. G. Cherkova,
Ж. В. Смагина,
А. В. Двуреченский,
A. Yu. Krupin,
О. М. Бородавченко,
V. D. Zhivulko,
А. В. Мудрый
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.09.51284.11
Subject(s) - raman spectroscopy , materials science , layer (electronics) , spectral line , deposition (geology) , substrate (aquarium) , photoluminescence , irradiation , cathode ray , electron beam processing , electron , electron diffraction , morphology (biology) , crystallography , diffraction , chemistry , optics , nanotechnology , optoelectronics , paleontology , oceanography , physics , quantum mechanics , astronomy , sediment , geology , nuclear physics , genetics , biology
In this work, we study the growth features, as well as the structural and optical properties of CaSi2 layers formed in the process of successive deposition of Si and CaF2 on a Si (111) substrate with simultaneous irradiation with high energy electron beam. The Raman spectra recorded in the regions of the electron beam action showed peaks characteristic of crystalline CaSi2 layers. The study of the surface morphology of the grown structures demonstrated that, under the chosen synthesis conditions, the formation of CaSi2 layers during electron irradiation occurs according to a two-dimensional layer mechanism. The photoluminescence spectra measured in the region modified by the electron beam have significant differences from the spectra measured outside this region.