Open AccessИнфракрасные (850 нм) светодиоды с множественными квантовыми ямами InGaAs и "тыльным" отражателем
Author(s) -
А.В. Малевская,
Н.А. Калюжный,
Д.А. Малевский,
С.А. Минтаиров,
А.М. Надточий,
М.В. Нахимович,
Ф.Ю. Солдатенков,
М.З. Шварц,
В.М. Андреев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.08.51143.9665
Subject(s) - optoelectronics , heterojunction , materials science , metalorganic vapour phase epitaxy , reflector (photography) , diode , quantum efficiency , light emitting diode , quantum well , substrate (aquarium) , gallium arsenide , radiation , wavelength , optics , laser , nanotechnology , epitaxy , physics , light source , oceanography , layer (electronics) , geology
Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92-93% has been achieved. Light-emitting diodes with the external quantum efficiency of 28.5% have been fabricated.