Open AccessПодавление эффекта квазинасыщения вольт-амперных характеристик мощных сверхвысокочастотных латеральных транзисторов
Author(s) -
Р.П. Алексеев,
М. Я. Черных,
А. Н. Цоцорин,
И.В. Семейкин,
Г.В. Быкадорова
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.08.51141.9658
Subject(s) - ldmos , materials science , optoelectronics , electrical engineering , transistor , engineering , voltage
Was been performed the analysis of electric parameters of a new generation of RF LDMOS transistors developed by JSC "NIIET". In comparison with the devices of the previous generation was revealed a significant suppression of the effect of quasi-saturation of ID – VG and ID – VD characteristics. Comparison with a foreign-made device shows that the achieved results are close to the world level.