Open AccessФотопроводимость и поглощение инфракрасного излучения в квантовых ямах p-GaAs/AlGaAs
Author(s) -
М.Я. Винниченко,
I. S. Makhov,
Н.Ю. Харин,
Stephen Graf,
В.Ю. Паневин,
I. V. Sedova,
S. V. Sorokin,
D. A. Firsov
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.08.51127.03
Subject(s) - photoconductivity , delocalized electron , photoionization , excited state , acceptor , ground state , spectral line , absorption spectroscopy , materials science , doping , valence (chemistry) , atomic physics , impurity , molecular physics , chemistry , optoelectronics , condensed matter physics , physics , ion , ionization , optics , organic chemistry , astronomy
The spectra of low-temperature impurity-assisted far and mid-infrared photoconductivity and absorption in nanostructure with multiple GaAs/AlGaAs quantum wells doped with acceptors are investigated. The experimentally obtained absorption and photoconductivity spectra correlate well with each other. According to the hole and acceptor state energy spectrum calculations the spectral features related to the optical hole transitions from the ground acceptor state to the delocalized states of valence subbands, to the excited acceptor states and to the delocalized states above the quantum well (photoionization) are identified in the absorption and photoconductivity spectra.