Open AccessСтруктурные свойства тонких пленок кристаллического топологического изолятора Pb-=SUB=-0.7-=/SUB=-Sn-=SUB=-0.3-=/SUB=-Te на Si(111)
Author(s) -
А. К. Кавеев,
Dmitry Bondarenko,
O. E. Tereshchenko
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.08.51126.02
Subject(s) - molecular beam epitaxy , monatomic gas , epitaxy , materials science , morphology (biology) , micrometer , surface (topology) , silicon , crystallography , nanotechnology , optoelectronics , optics , chemistry , geometry , geology , layer (electronics) , physics , paleontology , organic chemistry , mathematics
In this work, the selection and optimization of technological growth parameters of thin Pb0.7Sn0.3Te layers up to 300 nm thick, grown on the Si(111) surface at temperatures of230−400◦C by the method of molecular beam epitaxy was carriedout. The surface morphology of the films was studied, and theepitaxial relations were determined. It was shown that, dependingon the growth temperature, the surface morphology ranges fromrelatively narrow terraces to smooth micrometer-sized islands withmonoatomic steps on their surface.