Open AccessНеохлаждаемые фотодиоды для регистрации импульсного инфракрасного излучения в спектральном диапазоне 0.9-1.8 мкм
Author(s) -
Е.В. Куницына,
А.А. Пивоварова,
И.А. Андреев,
Г.Г. Коновалов,
Э.В. Иванов,
Н.Д. Ильинская,
Ю.П. Яковлев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.07.51027.9637
Subject(s) - photodiode , optoelectronics , materials science , infrared , radiation , wavelength , laser , active layer , optics , layer (electronics) , physics , nanotechnology , thin film transistor
Uncooled GaSb/GaAlAsSb photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9-1.8 µm have been developed. Active GaSb layer was grown using lead as a neutral solvent in order to reduce the concentration of natural acceptors. The capacity of the photodiodes with a diameter of photosensitive area of 300 µm was 115−135 pF with no bias and 62−70 pF at U=−1.5 V. The photodiode speed of response measured using an InGaAsP/InP laser with a wavelength of 1.55 µm reached tau=42−60 ns in the photovoltaic mode. It is shown experimentally that the photodiodes can be used without cooling to detect the pulsed radiation of lasers and LEDs in the near-infrared region of the spectrum.