Open AccessОптические свойства квазиобъемных кристаллов нитрида галлия со структурой высокоориентированной текстуры
Author(s) -
М.Г. Мынбаева,
А.Н. Смирнов,
К.Д. Мынбаев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.07.51015.9648
Subject(s) - stacking , materials science , sapphire , texture (cosmology) , gallium nitride , exciton , luminescence , ultraviolet , optoelectronics , wide bandgap semiconductor , semiconductor , basal plane , optics , crystallography , nanotechnology , condensed matter physics , laser , chemistry , computer science , physics , layer (electronics) , image (mathematics) , organic chemistry , artificial intelligence
The results of a study of the optical properties ofgallium nitride samples with a highly oriented texture structuregrown without the use of traditional semiconductor or sapphiresubstrates are presented. It is shown that the stacking faultscontained in the GaN blocks of the texture of the studied materialare self-organized heteropolytype nanostructures, and that theeffective luminescence in the ultraviolet spectral region associatedwith stacking faults I1 in the basal plane is determined by opticaltransitions of excitons localized near such natural defects in thesingle-crystalline bulk of the blocks of the GaN texture.