Open AccessВлияние деформации сжатия и растяжения на спектр дислокационной люминесценции в кремнии
Author(s) -
Н. А. Соболев,
А.Е. Калядин,
O. V. Feklisova,
Е. Б. Якимов
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.07.51014.9651
Subject(s) - dislocation , photoluminescence , luminescence , materials science , intensity (physics) , silicon , bending , ultimate tensile strength , optics , physics , composite material , optoelectronics
Photoluminescence has been studied in silicon deformedby four-point bending at temperature of 600◦C. So-calleddislocation-related luminescence lines D1, D2, D3 and D4 areobserved from both the sides of the deformed samples. It isfound that in the samples with the induced dislocation density~10^7 cm^−2, a luminescence intensity of the D3 and D4 lines isthe same on both the sample sides, and the intensity of the D1and D2 lines from the tensile side is higher than that from thecompressive side. Behavior of the intensity of the D1 and D2 linesis well correlated with a quantity of dislocation trails. Possiblereasons of observed effect are discussed.