Open AccessАнализ пороговых условий и эффективности генерации замкнутых мод в больших прямоугольных резонаторах на основе лазерных гетероструктур AlGaAs/GaAs/InGaAs
Author(s) -
A. A. Podoskin,
D. N. Romanovich,
I. S. Shashkin,
P. S. Gavrina,
Z. N. Sokolova,
S. O. Slipchenko,
N. A. Pikhtin
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.05.50838.9601
Subject(s) - optoelectronics , laser , materials science , gallium arsenide , heterojunction , common emitter , semiconductor , semiconductor laser theory , radiation , resonator , power (physics) , optics , physics , quantum mechanics
Threshold conditions and efficiency analsis of a semiconductor laser emitter with a large (1x1mm) rectangular resonator based on AlGaAs/GaAs/ InGaAs heterostructures for high-power strip lasers operating on high-Q internally circulating structures is presented. Two designs of emitters with different laser radiation propagation region characteristics are proposed, and the possibility of differential efficiency characteristic as high as high-power broad lasers (70% and more) is demonstrated.