Open AccessCurrent--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
Author(s) -
Abdelaziz Rabehi,
B. Akkal,
M. Amrani,
S. Tizi,
Z. Benamara,
Hicham Helal,
Abdelmalek Douara,
Bachir Nail,
Abderrezzaq Ziane
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.04.50744.9541a
Subject(s) - deep level transient spectroscopy , schottky diode , diode , arrhenius equation , capacitance , materials science , schottky barrier , analytical chemistry (journal) , silicon carbide , temperature coefficient , activation energy , optoelectronics , chemistry , silicon , electrode , organic chemistry , chromatography , metallurgy , composite material
In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current--voltage I(V) characteristics at room temperature and capacitance--voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350 o K). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phi L bn =0.91 eV, phi H bn =1.55 eV), with a difference of Deltaphi bn =0.64 eV. Also, low ideality factor n L =1.94 and high ideality factor n H =1.22 are obtained. The C-V-T measurements show that the barrier height phi bn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10 -3 eV/K and phi bn (T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies E a =0.50±0.07 eV, capture cross-section sigma=1.8·10 -20 cm 2 , and defect concentration N T =6.2·10 13 cm -3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).