Open AccessМощные непрерывные лазеры InGaAs/AlGaAs (1070 нм) с расширенным латеральным волноводом мезаполосковой конструкции
Author(s) -
И.С. Шашкин,
А.Ю. Лешко,
В.В. Шамахов,
Н.В. Воронкова,
В.А. Капитонов,
К.В. Бахвалов,
С.О. Слипченко,
Н.А. Пихтин,
П.С. Копьев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.04.50736.9565
Subject(s) - laser , materials science , optoelectronics , semiconductor laser theory , heat sink , continuous wave , optics , semiconductor , optical power , gallium arsenide , power (physics) , electrical engineering , physics , engineering , quantum mechanics
Semiconductor lasers with a 10 μm wide lateral waveguide of a mesa-stripe design were developed and their light characteristics were studied. Lasers with a 4.6mm long cavity is shown to have a continuous wave (CW) optical power of 2.6W at a heatsink temperature of 25◦C. Lasers with a shorter cavity (< 3mm) showed a lower value of the maximum optical power due to a thermal rollover of the light-current curve.