Open AccessПодавление температурной зависимости длины волны излучения в светодиодных структурах со ступенчатым гетеропереходом II типа InAsSb/InAsSbP
Author(s) -
А.А. Семакова,
В.В. Романов,
Н.Л. Баженов,
К.Д. Мынбаев,
К.Д. Моисеев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.03.50607.9549
Subject(s) - heterojunction , ternary operation , electroluminescence , materials science , optoelectronics , atmospheric temperature range , light emitting diode , condensed matter physics , nanotechnology , thermodynamics , physics , layer (electronics) , computer science , programming language
The results of a study of the electroluminescence of the asymmetric InAs/InAs1−ySby/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y=0.15 and y=0.16 in the temperature range 4.2−300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs1−ySby/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2−180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.