Open AccessВлияние электродов на параметры солнечно-слепых детекторов УФ излучения
Author(s) -
В.М. Калыгина,
А.В. Цымбалов,
А.В. Алмаев,
Ю. С. Петрова
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.03.50605.9545
Subject(s) - photocurrent , materials science , electrode , photoelectric effect , optoelectronics , sapphire , wavelength , ultraviolet , oxide , metal , photoconductivity , sputtering , detector , sensitivity (control systems) , optics , thin film , chemistry , physics , nanotechnology , laser , engineering , electronic engineering , metallurgy
The influence of electrode topology on the electrical and photoelectric characteristics of metal/semiconductor/metal structures was investigated. Gallium oxide films were obtained by radio-frequency sputtering of a Ga2O3 target onto sapphire substrates with the (0001) orientation. Two types of electrodes were formed on the surface of the oxide films: two parallel electrodes with an interelectrode distance of 250 mkm and interdigitated ones. The distance between the "fingers" of the detectors of the second type was 50, 30, 10, and5 mkm. Regardless of the type of contacts, the structures exhibit sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. Detectors of the second type with an interelectrode distance of 5 μm demonstrate the highest values of the photocurrent Iph = 3.8 mA and detectivity D * = 5.54⋅10^15 cmHz^0.5W^-1.