Open AccessВлияние конструкции активной области и волновода на характеристики лазеров на основе структур квантовые ямы-точки InGaAs/GaAs
Author(s) -
Шерняков Ю.М,
Н.Ю. Гордеев,
А.С. Паюсов,
A. A. Serin,
G. O. Kornyshov,
Надточий Алексей Михайлович,
M. M. Kulagina,
S. A. Mintairov,
Н.А. Калюжный,
Максимов Михаил Викторович,
Жуков Алексей Евгеньевич
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.03.50604.9547
Subject(s) - quantum dot , quantum dot laser , lasing threshold , excited state , quantum well , optoelectronics , quantum point contact , materials science , laser , electro absorption modulator , heterojunction , physics , wavelength , optics , atomic physics
We study edge-emitting lasers with the active areabased on novel InGaAs/GaAs quantum heterostructures of transitionaldimensionality referred to as quantum well-dots, which areintermediate in properties between quantum wells and quantumdots. We show that the rate of the lasing wavelength blue-shiftoccurring with the reduction in cavity length decreases with anincrease in the number of quantum well-dot layers in the activeregion and the optical confinement factor. In the laser based on10 quantum well-dot layers, the position of the lasing wavelengthremains in the optical region corresponding to the emission fromthe ground state down to the cavity lengths as short as 100 μm.In the devices based on a single quantum well-dot layer and/orwith low optical confinement factor, lasing directly switches fromthe ground state to the GaAs waveguide states omitting excitedstate lasing with decrease in cavity length below 200 μm. Such aneffect has not been observed in quantum well and quantum dotlasers and is attributed to the abnormally low density of excitedstates in quantum well-dots.