Open AccessУстойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний
Author(s) -
Д.А. Белорусов,
Е.И. Гольдман,
В.Г. Нарышкина,
Г.В. Чучева
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.01.50379.9511
Subject(s) - insulator (electricity) , materials science , silicon , oxide , semiconductor , voltage , optoelectronics , substrate (aquarium) , polarity (international relations) , silicon on insulator , asymmetry , condensed matter physics , electrical engineering , chemistry , physics , metallurgy , biochemistry , oceanography , quantum mechanics , geology , cell , engineering
Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . Anexplanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch fromthe semiconductor side significantly decreases to the contact with the substrate.