Open AccessНаращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"
Author(s) -
A. A. Sushkov,
Dmitry Pavlov,
С. А. Денисов,
В.Ю. Чалков,
R. N. Kriukov,
Е. А. Питиримова
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.10.49956.36
Subject(s) - materials science , silicon , chemical vapor deposition , layer (electronics) , substrate (aquarium) , transmission electron microscopy , optoelectronics , epitaxy , molecular beam epitaxy , buffer (optical fiber) , crystallography , nanotechnology , chemistry , telecommunications , oceanography , computer science , geology
Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).