Open AccessОсобенности МДП-структур на основе изолирующих пленок PbSnTe : In с составом вблизи инверсии зон, обусловленные их сегнетоэлектрическими свойствами
Author(s) -
А.Э. Климов,
А.Н. Акимов,
И.О. Ахундов,
В.А. Голяшов,
Д.В. Горшков,
Д.В. Ищенко,
Е.В. Матюшенко,
И.Г. Неизвестный,
Г.Ю. Сидоров,
С.П. Супрун,
А.С. Тарасов,
О.Е. Терещенко,
В.С. Эпов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.10.49955.29
Subject(s) - molecular beam epitaxy , curie temperature , materials science , ferroelectricity , epitaxy , condensed matter physics , phase transition , atmospheric temperature range , inversion (geology) , optoelectronics , nanotechnology , geology , thermodynamics , physics , ferromagnetism , layer (electronics) , dielectric , paleontology , structural basin
The characteristics of MIS structures based on insulating PbSnTe:In films with compositions in the vicinity of a band inversion grown by molecular beam epitaxy (MBE) were studied. It has been shown that a number of their features can be caused by a ferroelectric phase transition with a Curie temperature in the range T ≈ 15–20 K.