Open AccessСпонтанное и стимулированное излучение в тонких пленках твердых растворов Cu(In-=SUB=-1-x-=/SUB=-Ga-=SUB=-x-=/SUB=-)(S-=SUB=-y-=/SUB=-Se-=SUB=-1-y-=/SUB=-)-=SUB=-2-=/SUB=- в составе солнечных элементов
Author(s) -
И. Е. Свитенков,
В. Н. Павловский,
Е.В. Муравицкая,
Е. В. Луценко,
Г. П. Яблонский,
О. М. Бородавченко,
V. D. Zhivulko,
А. В. Мудрый,
М.В. Якушев,
С.О. Когновицкий
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.10.49943.9466
Subject(s) - excitation , nanocrystalline material , photoluminescence , nanosecond , analytical chemistry (journal) , materials science , atmospheric temperature range , band gap , emission spectrum , spectral line , thin film , atomic physics , laser , chemistry , optoelectronics , optics , nanotechnology , physics , chromatography , quantum mechanics , astronomy , meteorology
The results of a study of the emission spectra of thin nanocrystalline films of Cu(In1-xGax)(SySe1-y)2 (CIGSSe) direct-band-gap solid solutions in the structure of solar cells at ~ 0.5 W/cm2 continuous wave and nanosecond pulsed laser excitation in the range of excitation power density 0.1 - 53 kW/cm2 and temperatures of 10-300 K are presented. It was found that stimulated emission (SE) occurs in thin CIGSSe films in the temperature range from 10 K to 90 K in the spectral region h = 1.062 - 1.081 eV with a minimum threshold pump level of about 1 kW/cm2. It was shown, that, with increasing intensity of the exciting emission, the spontaneous emission bands shift toward higher energies. It was found that the photoluminescence bands at low excitation levels and the SE bands shift with increasing temperature toward higher energies, and the PL bands at high excitation levels shift toward low energies. Possible causes and mechanisms of the influence of temperature and excitation intensity on the spectral positions of spontaneous and SE of the films of solid solutions are discussed.