Open AccessСтруктура и фотоэлектрические свойства пленок PbSe, осажденных в присутствии аскорбиновой кислоты
Author(s) -
Л.Н. Маскаева,
В.М. Юрк,
В.Ф. Марков,
М.В. Кузнецов,
В.И. Bоронин,
О.А. Липина
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.10.49935.9411
Subject(s) - x ray photoelectron spectroscopy , scanning electron microscope , materials science , annealing (glass) , dopant , analytical chemistry (journal) , thin film , photoelectric effect , microanalysis , ascorbic acid , doping , chemistry , chemical engineering , nanotechnology , optoelectronics , metallurgy , food science , organic chemistry , chromatography , engineering , composite material
PbSe thin films chemically deposited using ascorbic acid as an antioxidant for selenourea were examined by X -ray diffraction (XRD), scanning electron microscopy (SEM) with X -ray microanalysis (EDX) and X -ray photoelectron spectroscopy (XPS). Influence of annealing temperature on chemical and phase composition, lattice parameters, surface morphology and photoelectric properties were studied. Determined that PbSe thin films contain dopant phase PbSeO3, PbSeO4, PbI2 after annealing at 633−683K. The direct and indirect optical band gaps Eg layers were observed. It has been shown that the deposited films are comparable with known commercial samples by their threshold photoelectric characteristics and can be used to create highly sensitive IR detectors.