Open AccessКомпенсация нелинейности сток-затворной вольт-амперной характеристики в полевых транзисторах с длиной затвора ~100 нм
Author(s) -
Е.А. Тарасова,
С.В. Оболенский,
C.В. Хазанова,
Н.Н. Григорьева,
О.Л. Голиков,
А.Б. Иванов,
А.С. Пузанов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49841.35
Subject(s) - optoelectronics , transistor , materials science , field effect transistor , schottky diode , schottky barrier , velocity overshoot , voltage , electron , electrical engineering , physics , engineering , diode , quantum mechanics
The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.