Open AccessОсобенности газофазной эпитаксии GaAs на непланарных подложках
Author(s) -
Ю Н Дроздов,
S. A. Kraev,
А. И. Охапкин,
V. M. Danil’tsev,
Е. В. Скороходов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49839.33
Subject(s) - epitaxy , wafer , materials science , etching (microfabrication) , optoelectronics , vapor phase , isotropic etching , plasma etching , nanotechnology , layer (electronics) , physics , thermodynamics
The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical etching installation and overgrown by organometallic vapor-phase epitaxy under reduced pressure in a reactor.