Open AccessФотодинамика люминесценции гибридных наноструктур InP/InAsP/InP ННК, пассивированных слоем ТОРО-CdSe/ZnS КТ
Author(s) -
А. И. Хребтов,
А. С. Кулагина,
В. В. Данилов,
Е. С. Громова,
Ivan D. Skurlov,
Aleksandr P. Litvin,
R. R. Reznik,
I. V. Shtrom,
Г. Э. Цырлин
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49838.32
Subject(s) - heterojunction , materials science , photoluminescence , quantum dot , optoelectronics , trioctylphosphine oxide , semiconductor , nanostructure , nanowire , excited state , spontaneous emission , layer (electronics) , oxide , nanotechnology , optics , laser , chemistry , atomic physics , physics , chromatography , metallurgy , extraction (chemistry)
The results of studies of the photodynamics of the excited state decay of a hybrid semiconductor nanostructure, which is an array of InP nanowires with InAsP nanoinsertions passivated with a layer of TOPO (trioctylphosphine oxide) containing colloidal CdSe/ZnS quantum dots, are presented. Time- and spectrally resolved measurement of photoluminescence InAsP nanoinsertions in the near infrared region at temperatures of 80 K and 293 K were made. The presence of a quasi-Langmuir layer of TOPO-CdSe/ZnS quantum dots on the surface of InP/InAsP/InP nanowires leads to an increase in the duration of radiative recombination and its dependence on temperature. It was found that the synthesized structure has a type-II heterojunction at the interface between the InAsP nanoinsertion and the InP volume. The influence of interfacial processes on increasing the duration of radiative recombination is discussed.