Спектры фотолюминесценции квантовых ям InAs/GaInSb/InAs в среднем ИК диапазоне
Author(s) -
V. V. Utochkin,
M. A. Fadeev,
С.C. Криштопенко,
В.В. Румянцев,
В.Я. Алешкин,
А. А. Дубинов,
Sergii Morozov,
Б.Р. Семягин,
М.А. Путято,
Е.А. Емельянов,
В. В. Преображенский,
V. I. Gavrilenko
Publication year - 2020
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49834.26
Subject(s) - heterojunction , photoluminescence , optoelectronics , materials science , spectral line , condensed matter physics , physics , quantum mechanics
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
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