Open AccessСинтез InGaN-наноструктур развитой морфологии на кремнии: влияние температуры подложки на морфологические и оптические свойства
Author(s) -
R. R. Reznik,
V. O. Gridchin,
К.П. Котляр,
Н.В. Крыжановская,
С.В. Морозов,
Г. Э. Цырлин
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49826.18
Subject(s) - photoluminescence , materials science , substrate (aquarium) , optoelectronics , nanostructure , intensity (physics) , light emitting diode , excitation , nanotechnology , optics , oceanography , physics , electrical engineering , engineering , geology
In this work, the influence of substrate temperatureon morphological and optical properties of branched InGaNnanostructures on the Si(111) surface during MBE growth wasstudied. It was shown that an increase of the substrate temperatureleads to a change in the morphology of InGaN nanostructures. Inparticular, the height of InGaN nanocolumns, which are formedat the initial stage of growth, increases. At the same time,an increase in the growth temperature of InGaN nanostructuresleads to an increase in the intensity of the photoluminescencespectra from such structures, and the dependences of the integratedphotoluminescence intensity on the excitation power are linear inboth cases. All these facts indicate the promise of such structuresfor optical applications, for example, for creating white LEDsbased on a single material