Open AccessИсследование микроволнового поглощения в полупроводниках для устройств умножения частоты и управления выводом излучения непрерывных и импульсных гиротронов
Author(s) -
К.В. Маремьянин,
В.В. Паршин,
Е.А. Серов,
В.В. Румянцев,
К.Е. Кудрявцев,
А.А. Дубинов,
А.П. Фокин,
С.С. Морозов,
В.Я. Алешкин,
М.Ю. Глявин,
Г.Г. Денисов,
С.В. Морозов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49825.17
Subject(s) - materials science , microwave , semiconductor , optoelectronics , dielectric , dissipation factor , dielectric loss , semiconductor device , crystal (programming language) , silicon , absorption (acoustics) , optics , physics , layer (electronics) , quantum mechanics , computer science , composite material , programming language
The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10^–4 even for a noticeable, at a level of 10^12 cm^–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.