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Особенности транспорта в топологической фазе Hg-=SUB=-0.87-=/SUB=-Cd-=SUB=-0.13-=/SUB=-Te в условиях терагерцового фотовозбуждения
Author(s) -
A. V. Galeeva,
Aleksander Kazakov,
A. I. Artamkin,
С. А. Дворецкий,
N. N. Mikhaĭlov,
M. I. Bannikov,
S. N. Danilov,
Л.И. Рябова,
D. R. Khokhlov
Publication year - 2020
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49824.16
Subject(s) - photoconductivity , terahertz radiation , excitation , radiation , materials science , optoelectronics , laser , epitaxy , physics , optics , nanotechnology , quantum mechanics , layer (electronics)
In this paper, we report on photoconductivity induced by high-power laser radiation with a frequency of 2 THz in Hg0.87Cd0.13Te-based epitaxial structures. Experimental results obtained for a set of the samples with variable geometric parameters allow us to determine the photoresponse features of both bulk and nonlocal contributions to the net response. We show that the persistent photoconductivity effect originates from the non-equilibrium processes related to the bulk carrier excitation.

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