Open AccessМодификация соотношения sp^2/sp^3-гибридного углерода в PECVD пленках DLC
Author(s) -
П.А. Юнин,
А. И. Охапкин,
М. Н. Дроздов,
С. А. Королев,
E. A. Arkhipova,
S. A. Kraev,
Ю Н Дроздов,
V. I. Shashkin,
D. B. Radishchev
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.09.49820.12
Subject(s) - plasma enhanced chemical vapor deposition , materials science , diamond , chemical vapor deposition , graphite , annealing (glass) , silicon , carbon fibers , diamond like carbon , inductively coupled plasma , carbon film , chemical engineering , analytical chemistry (journal) , material properties of diamond , nanotechnology , composite material , plasma , thin film , optoelectronics , chemistry , composite number , physics , quantum mechanics , engineering , chromatography
Abstract It is known that diamond-like carbon layers consist of carbon components with sp ^2 (graphite) and sp ^3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp ^2 and sp ^3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp ^2- and sp ^3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp ^3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.