Open AccessВлияние имплантации ионов Al-=SUP=-+-=/SUP=- на состав, электронную и кристаллическую структуру поверхности GaP(111)
Author(s) -
S. B. Donaev,
Б. Е. Умирзаков
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49655.9399
Subject(s) - nanocrystalline material , materials science , band gap , nanostructure , ion , lattice (music) , crystal structure , nanocrystal , substrate (aquarium) , crystallography , condensed matter physics , nanotechnology , chemistry , optoelectronics , physics , oceanography , organic chemistry , geology , acoustics
Nanocrystalline phases and GaAlP films were obtained by implanting Al+ ionswith E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, andtheir electronic and crystalline structures were studied. It is shown that the type andlattice parameters of a three-component nanostructure are in good agreement withthose for the substrate. The relationship between the band gap Eg and the sizes ofnanocrystalline phases is studied. It has been established that in the case of surfacesizes of phases d less than 35–40 nm (thickness 3.5–4 nm), the quantum-sizeeffects appear in the Ga0.6Al0.4P nanocrystalline phases.