Open AccessНерезонансное обращение волнового фронта света в оптически возбужденных пленках ZnO
Author(s) -
А. Н. Грузинцев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49653.9406
Subject(s) - semiconductor , laser , excited state , absorption (acoustics) , materials science , optics , photon energy , optoelectronics , intensity (physics) , infrared , photon , atomic physics , physics
The opportunity of the nonresonant phase conjugation of light (NPC) in the excited semiconductor was shown theoretical and experimental. The induced NPC of light in the visibal and infrared spectral region was detected on the ZnO epitaxial films at room temperature by nitrogen laser pumping. The dependences of the NPC signal intensity on its photon energy and on the intensity of laser pumping were investigated. This effect explanation was given: change of absorption and refraction of the light on the laser induced free carriers in the semiconductor.