Open AccessВзаимодействие фторуглерода с моноокисью кремния и процессы образования нанонитей SiC
Author(s) -
Е.В. Астрова,
В.П. Улин,
А.В. Парфеньева,
А.В. Нащекин,
В.Н. Неведомский,
М.В. Байдакова
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49647.9402
Subject(s) - silicon monoxide , carbon monoxide , materials science , whisker , stoichiometry , crystallization , chemical engineering , carbonization , silicon , monoxide , annealing (glass) , silicon carbide , nanowire , nanotechnology , chemistry , catalysis , scanning electron microscope , metallurgy , organic chemistry , composite material , engineering
When studying the processes of thermal carbonization of silicon monoxide in the presence of non-stoichiometric carbon monofluoride, it was found that increasing the annealing temperature of mixtures of SiO and CFx powders in a quasiclosed volume to 1000°C and higher leads to the release of whisker-like SiC nanocrystals. The studies showed that in parallel with the known crystallization of SiC nanowires as a result of the interaction of SiO vapors with carbon monoxide, previously undescribed interaction of CO with gas-phase silicon difluoride SiF2 takes part in their formation. At temperatures below 1200°C, this reaction is dominant, making the largest contribution to the yield of SiC nanowires.