Open AccessИсследование радиационных эффектов в МОП-транзиcторе с p-каналом
Author(s) -
А.В. Кузьминова,
Н.А Куликов,
В.Д. Попов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49643.9397
Subject(s) - transistor , silicon , materials science , optoelectronics , gate oxide , oxide , electron , surface (topology) , radiation , nanotechnology , electrical engineering , physics , optics , engineering , metallurgy , nuclear physics , geometry , mathematics , voltage
The effect of gamma radiation on the formation of surface defects at the Si−SiO2 interface in a MOS transistor with a p-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and ”hot“ electrons formed in the near-surface region of silicon is shown.