Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi | Zendy

R. Kh. Zhukavin | Zendy; К.А. Ковалевский | Zendy; С.Г. Павлов | Zendy; N. Deb mann | Zendy; Andreas Pohl | Zendy; V. V. Tsyplenkov | Zendy; N. V. Abrosimov | Zendy; H. Riemann | Zendy; HeinzWilhelm Hübers | Zendy; V. N. Shastin | Zendy

Open Access

Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi

Author(s) -

R. Kh. Zhukavin,

К.А. Ковалевский,

С.Г. Павлов,

N. Deb mann,

Andreas Pohl,

V. V. Tsyplenkov,

N. V. Abrosimov,

H. Riemann,

HeinzWilhelm Hübers,

V. N. Shastin

Publication year - 2020

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2020.08.49632.09

Subject(s) - bismuth , terahertz radiation , materials science , silicon , doping , excitation , raman scattering , raman spectroscopy , optoelectronics , stress (linguistics) , optics , metallurgy , physics , linguistics , philosophy , quantum mechanics

The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.

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