Open AccessПерестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi
Author(s) -
Р.Х. Жукавин,
К.А. Ковалевский,
С.Г. Павлов,
N. Deb mann,
Andreas Pohl,
V. V. Tsyplenkov,
Н. В. Абросимов,
H. Riemann,
H.-W. Hübers,
V. N. Shastin
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49632.09
Subject(s) - bismuth , terahertz radiation , materials science , silicon , doping , excitation , raman scattering , raman spectroscopy , optoelectronics , stress (linguistics) , optics , metallurgy , physics , linguistics , philosophy , quantum mechanics
The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.