Open AccessФормирование углеродных слоев методом термического разложения четыреххлористого углерода в реакторе МОС-гидридной эпитаксии
Author(s) -
Б. Н. Звонков,
О. В. Вихрова,
Ю.А. Данилов,
М. В. Дорохин,
П.Б. Демина,
М.Н. Дроздов,
А. В. Здоровейщев,
Р.Н. Крюков,
А.В. Нежданов,
Ю Н Антонов,
С.М. Планкина,
М.П. Темирязева
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49629.05
Subject(s) - materials science , chemical vapor deposition , raman spectroscopy , carbon fibers , graphite , gallium arsenide , metalorganic vapour phase epitaxy , nanocrystalline material , diode , thermal decomposition , hydrogen , deposition (geology) , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , optics , organic chemistry , epitaxy , metallurgy , composite material , paleontology , physics , engineering , layer (electronics) , sediment , composite number , biology
A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl_4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained by Raman spectroscopy, it can be conceived that the carbon layers produced by this method are the disordered nanocrystalline graphite. It is shown that such carbon layers can be used in the technological cycle of the production of gallium-arsenide optoelectronic device structures (among them spin light-emitting diodes with a CoPt injector).