Open AccessЗнакопеременная фотопроводимость в пленках PbSnTe : In в режиме тока, ограниченного пространственным зарядом
Author(s) -
А.Н. Акимов,
И.О. Ахундов,
Д.В. Ищенко,
А.Э. Климов,
И.Г. Неизвестный,
Н.С. Пащин,
С.П. Супрун,
А.С. Тарасов,
О.Е. Терещенко,
Е.В. Федосенко,
В.Н. Шерстякова
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.08.49628.04
Subject(s) - photoconductivity , sign (mathematics) , space charge , materials science , optoelectronics , biasing , energy spectrum , voltage , current (fluid) , condensed matter physics , atomic physics , physics , astrophysics , mathematics , nuclear physics , electron , mathematical analysis , quantum mechanics , thermodynamics
The dependence of the photoconductivity sign on the bias voltage, intensity and duration of illumination was studied in PbSnTe:In films in the space charge limited current regime. The role of traps with a complex energy spectrum, including the surface traps, in the observed effects is discussed