Open AccessФормирование наностержней GaN в монодисперсных сферических мезопористых частицах кремнезема
Author(s) -
Е.Ю. Стовпяга,
Д.А. Курдюков,
Д.А. Кириленко,
В.Г. Голубев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.07.49508.9387
Subject(s) - nanorod , materials science , annealing (glass) , dispersity , mesoporous material , chemical engineering , gallium nitride , gallium , composite number , nanotechnology , composite material , layer (electronics) , chemistry , polymer chemistry , organic chemistry , metallurgy , engineering , catalysis
Gallium nitride nanorods with a 15- 40 nm diameter and a 50-150 nm length have been synthesized in monodisperse spherical mesoporous silica particles (MSMSP) by high-temperature annealing the Ga2O3 precursor in ammonia. The template material (a-SiO2) was selectively removed by etching the composite MSMSP/GaN particles in HF. The individual GaN nanorods were thus obtained. It is shown, that the size of GaN nanorods was much higher than the pore size of MSMSP (diameter ~3 nm, length ~10 nm). The possible mechanism of formation of GaN nanorods was proposed. Redistribution of material inside the composite particles MSMSP/GaN possibly occurred by surface diffusion of gaseous molecules in mesopores and by diffusion of Ga and N atoms in a-SiO2.