Open AccessГетероструктура 2D SiC/Si: электронные состояния и адсорбционная способность
Author(s) -
С.Ю. Давыдов,
A. V. Zubov
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.07.49507.9350
Subject(s) - heterojunction , silicon carbide , silicon , materials science , layer (electronics) , substrate (aquarium) , adsorption , halogen , alkali metal , carbon fibers , charge (physics) , metal , optoelectronics , nanotechnology , composite number , chemistry , metallurgy , composite material , oceanography , alkyl , organic chemistry , physics , quantum mechanics , geology
A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.