Гетероструктура 2D SiC/Si: электронные состояния и адсорбционная способность | Zendy

С.Ю. Давыдов | Zendy; A. V. Zubov | Zendy

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Гетероструктура 2D SiC/Si: электронные состояния и адсорбционная способность

Author(s) -

С.Ю. Давыдов,

A. V. Zubov

Publication year - 2020

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2020.07.49507.9350

Subject(s) - heterojunction , silicon carbide , silicon , materials science , layer (electronics) , substrate (aquarium) , adsorption , halogen , alkali metal , carbon fibers , charge (physics) , metal , optoelectronics , nanotechnology , composite number , chemistry , metallurgy , composite material , oceanography , alkyl , organic chemistry , physics , quantum mechanics , geology

A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.

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