Open AccessО влиянии гетерограниц и толщины на кинетику кристаллизации пленок аморфного германия
Author(s) -
Г.К. Кривякин,
В.А. Володин,
Г.Н. Камаев,
Andrey Popov
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.07.49504.9376
Subject(s) - germanium , crystallization , crystallinity , materials science , annealing (glass) , amorphous solid , volume fraction , raman spectroscopy , silicon , thin film , analytical chemistry (journal) , chemical engineering , crystallography , nanotechnology , composite material , optoelectronics , chemistry , optics , chromatography , physics , engineering
The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T=440 oC) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.