
Модификация атомной и электронной структуры поверхности полупроводников А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=- на границе с растворами электролитов О б з ор
Author(s) -
М.В. Лебедев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.07.49502.9390
Subject(s) - semiconductor , electrolyte , materials science , charge (physics) , atomic physics , electronic structure , semiconductor device , chemistry , nanotechnology , physics , optoelectronics , computational chemistry , layer (electronics) , electrode , quantum mechanics
Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.