Open AccessКремниевые светодиоды с люминесценцией (113) дефектов
Author(s) -
А.Е. Калядин,
К.Ф. Штельмах,
П.Н. Аруев,
В.В. Забродский,
К.В. Карабешкин,
Е.И. Шек,
Н.А. Соболев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.06.49389.9369
Subject(s) - electroluminescence , materials science , excitation , annealing (glass) , atmospheric temperature range , spectral line , atomic physics , diode , silicon , luminescence , intensity (physics) , ion , current density , chemistry , optoelectronics , optics , physics , nanotechnology , meteorology , organic chemistry , layer (electronics) , quantum mechanics , astronomy , composite material
Silicon light-emitting diodes with luminescence associated with (113) defects have been fabricated using implantation of 350 keV oxygen ions at the dose of 3.7∙1014 cm-2 and subsequent annealing at 700ᵒC for 1 h in a chlorine-containing atmosphere. Electroluminescence was studied in wide ranges of temperature and an excitation power. The line associated with (113) defects dominates in all the spectra. The temperature dependence of the line intensity depends on the excitation power in the range of low temperatures: an increase of the intensity with activation energy of 25 meV is observed at low current density and, with the increasing current density, a rise of the intensity is not observed. At higher temperatures, a decrease of the intensity with activation energy of 59 meV occurs regardless of a current density. With the increasing temperature, the peak of the line shifts by the same energy as the forbidden gap width, while the half width of the line grows linearly.