Open AccessФормирование двухфазной структуры в металлоорганическом перовските CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbI-=SUB=-3-=/SUB=-
Author(s) -
Д.В. Амасев,
В.Г. Михалевич,
А.Р. Тамеев,
Ш.Р. Саитов,
А.Г. Казанский
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.06.49382.9358
Subject(s) - annealing (glass) , photoconductivity , materials science , perovskite (structure) , photoelectric effect , band gap , semiconductor , iodide , conductivity , electrical resistivity and conductivity , planar , mineralogy , analytical chemistry (journal) , optoelectronics , crystallography , inorganic chemistry , chemistry , metallurgy , physics , computer graphics (images) , chromatography , quantum mechanics , computer science
The effect of annealing of organometallic perovskite CH3NH3PbI3 film on its electrical, photoelectric, and optical properties is studied. It was shown that annealing at Та>140 °C leads to the two-phase structure formation consisting of perovskite and lead iodide, the relative content of which depends on the annealing conditions, in particular, on its temperature. The PbI2 formation in the perovskite structure leads to a decrease in the conductivity and photoconductivity of the material. Our studies indicate the possibility of forming planar structures consisting of semiconductor materials with various values of the band gap: 1.6 eV (CH3NH3PbI3) and 2.4 eV (PbI2).