Формирование многослойных структур с интегрированными мембранами на основе пористого кремния
Author(s) -
В.В. Болотов,
К.Е. Ивлев,
Е.В. Князев,
И.В. Пономарева,
В.Е. Росликов
Publication year - 2020
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.05.49269.9340
Subject(s) - membrane , materials science , ammonium hydroxide , silicon , porous silicon , chemical engineering , electrolyte , layer (electronics) , porosity , potassium hydroxide , nanotechnology , chemistry , composite material , electrode , optoelectronics , biochemistry , engineering
Multilayer integrated porous membranes in a monolithic frame were obtained. Porous membranes consist of macroporous silicon with pore diameters of up to 10 μm and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed to formation of macroporous/channel silicon two-layer structures using high-resistance n-Si substrates (1 Ohm•cm). The mechanism of pore formation is discussed and how this mechanism affects the morphology of porous layers when formic acid and ammonium hydroxide are used as electrolytes.
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