Open AccessМоделирование пространственной динамики включения лазера-тиристора (λ=905 нм) на основе многопереходной гетероструктуры AlGaAs/InGaAs/GaAs
Author(s) -
O. S. Soboleva,
V. S. Golovin,
V. S. Iuferev,
P. S. Gavrina,
N. A. Pikhtin,
S. O. Slipchenko,
A. A. Podoskin
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.05.49265.9341
Subject(s) - thyristor , impact ionization , laser , amplitude , saturation (graph theory) , physics , voltage , current (fluid) , optoelectronics , ionization , atomic physics , optics , ion , mathematics , quantum mechanics , combinatorics , thermodynamics
A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-μm stripe width of ~65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.