Open AccessИсследование напряжeнности внутренних электрических полей в активной области светодиодных структур на основе InGaN/GaN с разным числом квантовых ям методом спектроскопии электропропускания
Author(s) -
А.Э. Асланян,
Л.П. Авакянц,
А.В. Червяков,
A. N. Turkin,
S. S. Mirzai,
В. А. Курешов,
Д. Р. Сабитов,
А. А. Мармалюк
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49151.9335
Subject(s) - quantum well , heterojunction , electric field , condensed matter physics , spectral line , materials science , piezoelectricity , quantum , spectroscopy , physics , optics , quantum mechanics , composite material , laser
The internal electric fields of InGaN/GaN-based green-emission LED heterostructures with various numbers of quantum wells in the active region are investigated by electrotransmission spectroscopy. The frequencies of the observed spectral lines are attributed to possible types of interband transitions. An increase in the number of interband transitions of the “quantum well—quantum barrier” type with an increase in the number of quantum wells is found. This is explained by the nonidentical degree of segregation of In atoms in different GaN barriers layers. The strength of internal electric fields in quantum wells is calculated for various values of the bias of the p – n junction using a series of electrotransmission spectra. It is found that the strength of the internal piezoelectric field decreases from 3.20 to 2.82 MV/cm with an increase in the number of quantum wells.