
Одномодовые лазеры (1050 нм) мезаполосковой конструкции на основе гетероструктуры AlGaAs/GaAs со сверхузким волноводом
Author(s) -
И.С Шашкин,
А.Ю Лешко,
Д.Н Николаев,
В.В Шамахов,
Д.А Веселов,
Н.А Рудова,
К.В Бахвалов,
В.В Золотарев,
С.О Слипченко,
Н.А Пихтин,
П.С Копьев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49150.9334
Subject(s) - cladding (metalworking) , materials science , overheating (electricity) , optoelectronics , laser , waveguide , optics , optical power , continuous wave , heterojunction , single mode optical fiber , physics , quantum mechanics , metallurgy
The radiation properties of single-mode lasers based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide are studied. It is shown that the use of an ultra-narrow waveguide (100 nm) and thin (70 nm) wide-gap barriers at the waveguide/cladding interface improves the vertical divergence. The lateral and vertical divergences were 5 and 18.5 degrees, respectively, for the developed narrow-stripe (5.1 µm) single-mode lasers. An efficient single-mode operation up to a power of 200 mW is demonstrated. A further increase in current leads to the onset of higher-order modes, while the maximum optical power achieved under continuous-wave (CW) operation is limited by overheating and is 550 mW. The transfer to a pulsed operation (pulse width 200 ns) made it possible to raise the maximum peak optical power to 1500 mW.