Open AccessМногоуровневая запись в тонких пленках Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-
Author(s) -
S. A. Fefelov,
L. P. Kazakova,
Н.А. Богословский,
A. B. Bylev,
А.О. Якубов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49144.9301
Subject(s) - materials science , memristor , channel (broadcasting) , value (mathematics) , current (fluid) , thin film , sample (material) , analytical chemistry (journal) , optoelectronics , nanotechnology , mathematics , chemistry , electronic engineering , physics , electrical engineering , statistics , thermodynamics , engineering , chromatography
I−V characteristics obtained on Ge2Sb2Te5 thin films in the current mode were studied. The effect of multilevel recording was established upon sequentially applying to the sample current pulses with increasing maximum value. It was shown that this effect can be associated with expansion of the memorychannel. An estimate of the channel size is obtained. It is concluded that Ge2Sb2Te5 films can be used as a memristor.