Open AccessЗависимость кинетики кристаллизации тонких пленок Cr-=SUB=-0.26-=/SUB=-Si-=SUB=-0.74-=/SUB=- от толщины
Author(s) -
С. В. Новиков,
В. С. Кузнецова,
А. Т. Бурков,
И. Шуманн
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49139.9337
Subject(s) - materials science , nanocrystalline material , annealing (glass) , thermoelectric effect , seebeck coefficient , amorphous solid , crystallization , sputter deposition , thin film , cavity magnetron , optoelectronics , electrical resistivity and conductivity , thermoelectric materials , nanocrystal , sputtering , composite material , thermal conductivity , chemical engineering , nanotechnology , crystallography , thermodynamics , electrical engineering , chemistry , physics , engineering
In this work we study thermoelectric properties of Cr0.26Si0.74 thin films with thickness of 11, 14, 21, 31, 56, 74, 115 nm. The films were produced by magnetron sputtering onto unheated substrate. The films had amorphous structure. Thermoelectric properties of samples were studied during thermal annealing in pure helium atmosphere. Changing of thermoelectric properties during annealing indicated changing in structure. It was found that kinetic of crystallization depends on the thickness of the films. The thermopower of nanocrystalline films decreases with increasing film thickness, and the power factor reaches its maximum value in films with a thickness of 31 nm.