Open AccessДиэлектрическая спектроскопия и механизм фазового перехода полупроводник-металл в легированных пленках VO-=SUB=-2-=/SUB=-:Ge и VO-=SUB=-2-=/SUB=-:Mg
Author(s) -
A. V. Il’inskiĭ,
Р. А. Кастро,
M. E. Pashkevich,
E. B. Shadrin
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49136.9319
Subject(s) - materials science , impurity , dissipation factor , analytical chemistry (journal) , dielectric , phase diagram , germanium , atmospheric temperature range , vanadium , condensed matter physics , semiconductor , spectral line , doping , phase (matter) , thermodynamics , chemistry , silicon , physics , metallurgy , optoelectronics , organic chemistry , chromatography , astronomy
Abstract The frequency dependences of the dissipation factor tanδ( f ) and the Cole–Cole diagrams for germanium- and magnesium-doped vanadium-dioxide films in the range of 0.1–10^6 Hz are obtained. Measurements at temperatures between 173–373 K are performed. It is found that, at room temperature, an additional maximum in the tanδ( f ) dependence and an additional semicircle in the Cole–Cole diagram of the VO_2:Ge films as compared with those of undoped films appear at low frequencies. In the VO_2:Mg films, similar additional features in the dielectric spectra are observed at high frequencies. It is shown that the shape of the Cole – Cole diagrams for all the films is almost temperature independent in the mentioned temperature range, while the frequencies f _0 corresponding to the tanδ( f ) maxima increase with temperature. To interpret the dielectric spectroscopy data, a combined equivalent electrical circuit of the film sample is proposed. The mechanisms of the effect of Ge and Mg impurities on the characteristics of the complex Mott–Peierls semiconductor–metal phase transition are established.