Open AccessТемпературно-зависимое интегральное поглощение экситонных поляритонов в полупроводниковых кристаллах
Author(s) -
Р.П. Сейсян,
С.А. Ваганов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49135.9293
Subject(s) - semiconductor , exciton , cadmium telluride photovoltaics , absorption (acoustics) , materials science , absorption edge , polariton , transverse plane , dispersion (optics) , condensed matter physics , optics , physics , optoelectronics , band gap , structural engineering , engineering
This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the fundamental absorption edge in semiconductor crystals with spatial dispersion. The results of experimental studies of temperature-dependent total exciton absorption are generalized. The experimentally determined critical temperatures above which total absorption becomes constant, the corresponding critical damping parameter, and longitudinal–transverse splittings for the studied semiconductors CdTe, GaAs, InP, ZnSe, and ZnTe are presented.